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• W1775688740 abstract "An advanced nitrogen implantation technique is proposed. The new technique can suppress remarkably the hot carrier degradation. Since the generation of interface states can be reduced by the incorporation of nitrogen at the interface between a substrate and SiO/sub 2/ spacers. Moreover, the ultra shallow junction without the increase in leakage current can be formed by nitrogen implantation into the source/drain. Since the secondary defects induced by nitrogen implantation can act as a surface proximity gettering (SPG) site." @default.
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• W1775688740 date "2002-11-19" @default.
• W1775688740 modified "2023-09-26" @default.
• W1775688740 title "Highly reliable 0.15 μm MOSFETs with Surface Proximity Gettering (SPG) and nitrided oxide spacer using nitrogen implantation" @default.
• W1775688740 cites W1972373763 @default.
• W1775688740 doi "https://doi.org/10.1109/vlsit.1995.520839" @default.
• W1775688740 hasPublicationYear "2002" @default.
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