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- W1777896886 abstract "A total area conversion efficiency of 18.3% (one sun, AM0) was achieved with 10*10 mm/sup 2/ GaAs-on-Si cells by dislocation reduction in the cell active layers using in situ thermal cycles, a strained-layer superlattice, and a multilayered AlGaAs buffer. The efficiency is comparable to that of conventional homoepitaxial liquid-phase epitaxy cells. The radiation resistance of the GaAs-on-Si cells was confirmed by 1 MeV electron irradiation tests.< <ETX xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>></ETX>" @default.
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- W1777896886 date "1988-01-01" @default.
- W1777896886 modified "2023-09-27" @default.
- W1777896886 title "High efficiency GaAs solar cells fabricated on Si substrates" @default.
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- W1777896886 doi "https://doi.org/10.1109/pvsc.1988.105747" @default.
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