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• W1779288594 abstract "A review is given of the different methods to extract the main parameters from a Random Telegraph Signal (RTS) occurring in the channel current of small-area Metal-Oxide-Semiconductor Field-Effect Transistors, namely, its amplitude and its average up and down time constants. The advantages of using a so-called colored Time Lag Plot will be illustrated, enabling the detection of single defects in semiconductor materials and devices with high sensitivity. It will finally be shown that a detailed modeling of the RTS amplitude in vertical polycrystalline silicon transistors can yield the position of the trap in the channel with high accuracy." @default.
• W1779288594 created "2016-06-24" @default.
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• W1779288594 date "2016-08-01" @default.
• W1779288594 modified "2023-10-02" @default.
• W1779288594 title "Random telegraph noise: The key to single defect studies in nano-devices" @default.
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• W1779288594 doi "https://doi.org/10.1016/j.tsf.2015.08.037" @default.
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