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• W1781789966 abstract "We present evidence of moderate current density, when accompanied with high temperature, promoting migration of foreign atoms on the surface of multi-layer graphene. Our in situ transmission electron microscope experiments show migration of silicon atoms at temperatures above 800 °C and current density around 4.2 × 107 A/cm2. Originating from the micro-machined silicon structures that clamp the freestanding specimen, the atoms are observed to react with the carbon atoms in the multi-layer graphene to produce silicon carbide at temperatures of 900–1000 °C. In the absence of electrical current, there is no migration of silicon and only pyrolysis of polymeric residue is observed." @default.
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• W1781789966 date "2015-10-19" @default.
• W1781789966 modified "2023-10-06" @default.
• W1781789966 title "High temperature and current density induced degradation of multi-layer graphene" @default.
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• W1781789966 doi "https://doi.org/10.1063/1.4934260" @default.
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