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- W1784720504 abstract "Epitaxial growth of AlN films on c-sapphire using a multilayer structure has been investigated by metal–organic chemical vapor deposition adopting multiple alternation cycles of low- and high-temperature (LT–HT) growth. It is found that the surface morphology and crystal quality can be greatly improved using three alternation cycles with X-ray diffraction ω-scan full width at half maximum values of 311 and 548 arcsec for the (0002) and (10−12) peaks, respectively, which are induced by the alternation of the three-dimensional (3D) and two-dimensional (2D) growth modes caused by the LT–HT process. The first 3D–2D cycle is found to play a major role in threading dislocation reduction, while the second and third cycles mainly account for tensile stress relaxation." @default.
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- W1784720504 date "2015-01-01" @default.
- W1784720504 modified "2023-10-15" @default.
- W1784720504 title "Epitaxial growth of AlN films on sapphire via a multilayer structure adopting a low- and high-temperature alternation technique" @default.
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- W1784720504 doi "https://doi.org/10.1039/c5ce01159k" @default.
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