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- W1799403664 abstract "A simple and accurate technique for low-frequency MOSFET gate capacitance measurement using the voltage response of these devices to constant gate current is described. The capability of this technique is demonstrated in Capacitance-Voltage (C-V) curves by showing the effects of gate current on the MOS characteristics. Using a Hewlett-Packard 4156 (HP4156) precision semiconductor parameter analyzer to measure the rate of voltage change across MOS capacitors while forcing a constant current, accurate C-V curve are derived over the 1pF to 1nF range." @default.
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- W1799403664 date "2002-11-28" @default.
- W1799403664 modified "2023-09-22" @default.
- W1799403664 title "A constant gate current technique for obtaining low-frequency C-V characteristics of MOS capacitors" @default.
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- W1799403664 doi "https://doi.org/10.1109/irws.1998.745365" @default.
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