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- W1799418602 abstract "Conductive transparent In 2 O 3 thin films with (222)-preferred orientation were prepared by rapid thermal oxidation (RTO) in static air of indium thin films at condition 200°C/30 s. Detailed structural, electrical, and optical characteristics of the film are presented. The data are interpreted to give a direct bandgap of 3.6 eV and indirect bandgap of 2.5 eV. The grown In 2 O 3 films exhibited high figure of merit and sheet resistance as low as 20 Ω/sq. in the absence of any post-deposition annealing conditions. The mobility of these films was estimated to be 31 cm 2 · V -1 · s -1 . These results are compared with those of In 2 O 3 films prepared by other methods." @default.
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- W1799418602 date "2005-08-01" @default.
- W1799418602 modified "2023-10-01" @default.
- W1799418602 title "PREPARATION AND CHARACTERIZATION OF <font>In</font><sub>2</sub><font>O</font><sub>3</sub> THIN FILMS FOR OPTOELECTRONIC APPLICATIONS" @default.
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- W1799418602 doi "https://doi.org/10.1142/s0218625x05007359" @default.
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