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• W1808376852 abstract "In dilute magnetic semiconductors studies, sapphire was usually used as non-magnetic substrate for films. We observed weak ferromagnetic component in Al2O3 single crystal substrate, and excluded the possibility of ferromagnetic contaminations carefully by inductively coupled plasma mass spectrometry and X-ray photoelectron spectroscopy. The ferromagnetism rise and fall during the process of annealing-oxygen irradiation-annealing of the sapphire. The ferromagnetic changes are consistent with Al-vacancy related defects detected by positron annihilation spectroscopy. With first-principle calculations, we confirm that Al-vacancy can introduce magnetic moment for 3 μB in Al2O3 crystal and form stable VAl-VAl ferromagnetic coupling at room temperature." @default.
• W1808376852 created "2016-06-24" @default.
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• W1808376852 date "2015-06-18" @default.
• W1808376852 modified "2023-09-26" @default.
• W1808376852 title "Rise and fall of ferromagnetism in O-irradiated Al2O3 single crystals" @default.
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• W1808376852 doi "https://doi.org/10.1063/1.4922788" @default.
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