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• W1808656671 abstract "Silicon nanocrystals have been generated by laser induced phase separation in SiOx films. A continuous wave laser emitting at 405 nm is focused to a 6 μm diameter spot on 530 nm thick SiOx films deposited on fused silica substrates. Irradiation of lines is accomplished by focus scanning. The samples are investigated by atomic force microscopy, TEM, Raman spectroscopy, and photoluminescence measurements. At a laser power of 35 mW corresponding to an irradiance of about 1.2 × 105 W/cm2, the formation of Si-nanocrystals in the film without any deterioration of the surface is observed. At higher laser power, the central irradiated region is oxidized to SiO2 and exhibits some porous character, while the surface remains optically smooth, and nanocrystals are observed beside and beneath this oxidized region. Amorphous Si-nanoclusters are formed at lower laser power and around the lines written at high power." @default.
• W1808656671 created "2016-06-24" @default.
• W1808656671 creator A5031875697 @default.
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• W1808656671 date "2015-09-28" @default.
• W1808656671 modified "2023-10-16" @default.
• W1808656671 title "Generation of silicon nanocrystals by damage free continuous wave laser annealing of substrate-bound SiOx films" @default.
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• W1808656671 doi "https://doi.org/10.1063/1.4931670" @default.
• W1808656671 hasPublicationYear "2015" @default.
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