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- W1808672169 abstract "Selective planar regrowth of high resistivity (as high as 10/sup 9/ /spl Omega/.cm) Fe-doped semi-insulating InP epitaxial layers has been studied to fabricate current confining layers for buried heterostructure lasers. The epitaxial layers were grown with conventional growth conditions on patterned, nonplanar heterostructure mesa by low-pressure organometallic vapor phase epitaxy (LP-MOVPE) with tertiarybutylphosphine (TBP), trimethylindium (TMI) and iron dicyclopentadienyl (Fe(C5H5)2) as the reactant gases. This selective growth has been developed around laser stripes designed without overhang of the selective growth mask. And shows very good static characteristics of the SI-BH lasers as compared to standard BRS laser structures." @default.
- W1808672169 created "2016-06-24" @default.
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- W1808672169 date "2003-01-20" @default.
- W1808672169 modified "2023-09-27" @default.
- W1808672169 title "Realisation of SI-BH lasers buried by selective LP-MOVPE regrowth under conventional conditions using TBP" @default.
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- W1808672169 doi "https://doi.org/10.1109/iciprm.1999.773753" @default.
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