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• W1811036612 abstract "Highly [001]-oriented PbTiO/sub 3/ thin films were deposited on MgO and Pt/MgO substrates by reactive sputtering. The films were deposited at substrate temperatures around 530/spl deg/C. Epitaxial growth and domain formation could be verified by the conventional /spl theta/-2/spl theta/ Bragg-Brentano X-ray and by the newly developed in-plane energy dispersive total reflection X-ray diffraction (ED-TXRD) technique. The lattice parameters of the films could be determined from patterns from both X-ray techniques. In spite of some lattice mismatches between the substrates and the PbTiO/sub 3/ films, it was found that Nb-doped films had improved dielectric properties over undoped ones. Nb-doped PbTiO/sub 3/ films may be very suitable for fabrication of MEMS, pressure and pyroelectric sensors, SAW devices, memory devices, etc." @default.
• W1811036612 created "2016-06-24" @default.
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• W1811036612 date "2003-01-22" @default.
• W1811036612 modified "2023-09-25" @default.
• W1811036612 title "Nb-doped PbTiO/sub 3/ films deposited on MgO substrates" @default.
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• W1811036612 doi "https://doi.org/10.1109/ultsym.1999.849165" @default.
• W1811036612 hasPublicationYear "2003" @default.
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