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• W1817007859 endingPage "89" @default.
• W1817007859 startingPage "65" @default.
• W1817007859 abstract "This chapter describes the hydrogen (H) neutralization of deep levels in silicon. These are defects because of the so-called “deep” impurities, such as the metals gold (Au), iron (Fe), nickel (Ni), copper (Cu), platinum (Pt), palladium (Pd), molybdenum (Mo), and silver (Ag). The removal of the deep levels associated with these defects normally requires annealing temperatures of at least 400°C but can be achieved by H neutralization at much lower temperatures. The thermal evolution of H from these defects has activation energy of at least 2.2 eV. The chalcogens, sulfur (S), selenium (Se), and tellurium (Te), also form deep levels. The chapter discusses the problem of oxygen thermal donors that form two levels near the conduction band. These oxygen defects can be neutralized by monatomic H (that is, their states removed from the energy bandgap), but the microstructure of the oxygen-related defect is still unknown. The chapter also discusses process-related defects, such as those because of sputter etching and deposition, and reactive-ion etching. There is a useful table of energy levels associated with various defects and the reactivation energy of these defects by thermal dehydrogenation treatment. In some cases, prehydrogenation treatments may last through subsequent processing steps to provide protection against further defect formation, such as during silicide formation that is equivalent to damage hardening. The chapter presents a list of the deep-level centers passivated by atomic hydrogen in the major elemental semiconductor, such as silicon (Si), and discusses their thermal stability and the possible passivation mechanisms." @default.
• W1817007859 created "2016-06-24" @default.
• W1817007859 creator A5085381025 @default.
• W1817007859 date "1991-01-01" @default.
• W1817007859 modified "2023-09-23" @default.
• W1817007859 title "Chapter 5 Neutralization of Deep Levels in Silicon" @default.
• W1817007859 cites W165685244 @default.
• W1817007859 cites W1963863199 @default.
• W1817007859 cites W1969531657 @default.
• W1817007859 cites W1970114135 @default.
• W1817007859 cites W1970142173 @default.
• W1817007859 cites W1970164715 @default.
• W1817007859 cites W1974851488 @default.
• W1817007859 cites W1976831965 @default.
• W1817007859 cites W1980942407 @default.
• W1817007859 cites W1984372362 @default.
• W1817007859 cites W1985455874 @default.
• W1817007859 cites W1988606178 @default.
• W1817007859 cites W1989096646 @default.
• W1817007859 cites W1989236582 @default.
• W1817007859 cites W1990127301 @default.
• W1817007859 cites W1990263265 @default.
• W1817007859 cites W1998376328 @default.
• W1817007859 cites W1999005676 @default.
• W1817007859 cites W1999701921 @default.
• W1817007859 cites W1999980359 @default.
• W1817007859 cites W2002161160 @default.
• W1817007859 cites W2005635819 @default.
• W1817007859 cites W2009511007 @default.
• W1817007859 cites W2022683916 @default.
• W1817007859 cites W2022700994 @default.
• W1817007859 cites W2028279809 @default.
• W1817007859 cites W2030697032 @default.
• W1817007859 cites W2033565752 @default.
• W1817007859 cites W2034462109 @default.
• W1817007859 cites W2035200880 @default.
• W1817007859 cites W2038236409 @default.
• W1817007859 cites W2044210556 @default.
• W1817007859 cites W2047105899 @default.
• W1817007859 cites W2054524682 @default.
• W1817007859 cites W2054737619 @default.
• W1817007859 cites W2057878351 @default.
• W1817007859 cites W2060326397 @default.
• W1817007859 cites W2061270017 @default.
• W1817007859 cites W2062992522 @default.
• W1817007859 cites W2070729736 @default.
• W1817007859 cites W2076989316 @default.
• W1817007859 cites W2077238226 @default.
• W1817007859 cites W2079277452 @default.
• W1817007859 cites W2079866538 @default.
• W1817007859 cites W2083119222 @default.
• W1817007859 cites W2084163438 @default.
• W1817007859 cites W2092665187 @default.
• W1817007859 cites W2094505912 @default.
• W1817007859 cites W2096520080 @default.
• W1817007859 cites W2120221179 @default.
• W1817007859 cites W2120776794 @default.
• W1817007859 cites W2149373503 @default.
• W1817007859 cites W2153698445 @default.
• W1817007859 cites W2328828342 @default.
• W1817007859 cites W2332105759 @default.
• W1817007859 cites W2138908822 @default.
• W1817007859 doi "https://doi.org/10.1016/s0080-8784(08)62860-4" @default.
• W1817007859 hasPublicationYear "1991" @default.
• W1817007859 type Work @default.
• W1817007859 sameAs 1817007859 @default.
• W1817007859 citedByCount "12" @default.
• W1817007859 countsByYear W18170078592015 @default.
• W1817007859 countsByYear W18170078592022 @default.
• W1817007859 crossrefType "book-chapter" @default.
• W1817007859 hasAuthorship W1817007859A5085381025 @default.
• W1817007859 hasConcept C171250308 @default.
• W1817007859 hasConcept C178790620 @default.
• W1817007859 hasConcept C185592680 @default.
• W1817007859 hasConcept C191897082 @default.
• W1817007859 hasConcept C192562407 @default.
• W1817007859 hasConcept C2779227376 @default.
• W1817007859 hasConcept C33574316 @default.
• W1817007859 hasConcept C512968161 @default.
• W1817007859 hasConcept C544956773 @default.
• W1817007859 hasConceptScore W1817007859C171250308 @default.
• W1817007859 hasConceptScore W1817007859C178790620 @default.
• W1817007859 hasConceptScore W1817007859C185592680 @default.
• W1817007859 hasConceptScore W1817007859C191897082 @default.
• W1817007859 hasConceptScore W1817007859C192562407 @default.
• W1817007859 hasConceptScore W1817007859C2779227376 @default.
• W1817007859 hasConceptScore W1817007859C33574316 @default.
• W1817007859 hasConceptScore W1817007859C512968161 @default.
• W1817007859 hasConceptScore W1817007859C544956773 @default.
• W1817007859 hasLocation W18170078591 @default.
• W1817007859 hasOpenAccess W1817007859 @default.
• W1817007859 hasPrimaryLocation W18170078591 @default.
• W1817007859 hasRelatedWork W2022507789 @default.
• W1817007859 hasRelatedWork W2059367690 @default.
• W1817007859 hasRelatedWork W2090143721 @default.
• W1817007859 hasRelatedWork W2142340206 @default.
• W1817007859 hasRelatedWork W2172199185 @default.
• W1817007859 hasRelatedWork W2737049165 @default.

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