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• W1820878426 abstract "Electronic and optical properties of non-trivial semipolar AlInGaN/InGaN quantum well (QW) structures are investigated by using the multiband effective-mass theory and non-Markovian optical model. On vicinal c-plane GaN substrate miscut by a small angle (θ &lt; 40°) from c-plane, the AlInGaN/InGaN system is shown to have ∼3 times larger spontaneous emission peak intensity than the conventional InGaN/GaN system at green wavelength. It is attributed to much larger optical matrix element of the quaternary AlInGaN/InGaN system, derived from the reduction of internal electric field induced by polarizations. This effect exceeds the performance-degrading factor of smaller quasi-Fermi-level separation for the quaternary AlInGaN/InGaN system than that for the conventional InGaN/GaN system. Results indicate that the use of quaternary III-nitride QWs on vicinal substrates may be beneficial in improving the performance of optical devices emitting green light." @default.
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• W1820878426 date "2015-05-13" @default.
• W1820878426 modified "2023-10-06" @default.
• W1820878426 title "Quaternary AlInGaN/InGaN quantum well on vicinal c-plane substrate for high emission intensity of green wavelengths" @default.
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• W1820878426 doi "https://doi.org/10.1063/1.4920995" @default.
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