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- W182198123 abstract "Scanning tunneling spectroscopy of ${mathrm{Bi}}_{2}{mathrm{Se}}_{3}$ and ${mathrm{Bi}}_{2}{mathrm{Te}}_{3}$ layered narrow gap semiconductors reveals finite in-gap density of states and suppressed conduction in the energy range of high valence-band states. Electronic structure calculations suggest that the surface effects are responsible for these properties. Conversely, the interlayer coupling has a strong effect on the bulk near-gap electronic structure. These properties may prove to be important for the thermoelectric performance of these and other related chalcogenides." @default.
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- W182198123 date "2004-02-19" @default.
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- W182198123 title "Surface effects in layered semiconductors<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant=normal>Bi</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant=normal>Se</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>and<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><…" @default.
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- W182198123 doi "https://doi.org/10.1103/physrevb.69.085313" @default.
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