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- W1835358945 abstract "We report on pulsed laser evaporation and epitaxy (PLEE) of Cd 0.90 Mn 0.10 Te material that has potentials for application in optoelectronic devices operating in the wavelength range of 750–850 nm. Two lasers, Nd:YAG and excimer XeCl, are used to provide fluxes of atoms by laser ablation of high-purity polycrystalline targets. We demonstrate that the XeCl-laser-induced congruent vaporization of a multi-element solid target led to epitaxy of Cd 0.90 Mn 0.10 Te. The epitaxial layers were grown on (001) InSb and (001) Cd 0.955 Zn 0.045 Te substrates held at a temperature in the range of 200–240 °C. Structural characterization of the layers was carried out with in situ reflection high-energy electron diffraction, scanning electron microscopy, and double crystal X-ray diffraction. An excellent reproducibility of chemical composition of the PLEE-grown films has been demonstrated. Optical and structural properties of the films correspond to those of the best bulk Cd 0.90 Mn 0.10 Te or epitaxial layers grown by molecular beam epitaxy or metal organic vapour phase epitaxy." @default.
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- W1835358945 date "1991-03-01" @default.
- W1835358945 modified "2023-09-26" @default.
- W1835358945 title "Epitaxy of Cd0.90Mn0.10Te for optoelectronic devices" @default.
- W1835358945 doi "https://doi.org/10.1139/p91-045" @default.
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