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• W1837658997 abstract "The fabrication processes of heterostructure field-effect transistors (HFETs) often introduce stresses into the device structures. These stresses can significantly affect the electrical characteristics of the device. We investigated the additional strain induced by the gate metals (in this study, Au, Cu, Fe, Al, and Ni) in AlGaN/AlN/GaN HFETs using the measured capacitance-voltage and current-voltage characteristics. We found that the intensity of the additional strain of the AlGaN barrier layer is greatly affected by the types of gate metals. For those metals that mainly undergo a physical interaction with the AlGaN barrier layer, there is a negative correlation between the intensity of the additional strain and the Young's modulus of the gate metal. Therefore, the gate metal with a larger Young's modulus will be more favorable for weakening polarization Coulomb field scattering and increasing both the carrier mobility and the sheet carrier density in AlGaN/AlN/GaN HFETs." @default.
• W1837658997 created "2016-06-24" @default.
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• W1837658997 date "2015-09-14" @default.
• W1837658997 modified "2023-10-13" @default.
• W1837658997 title "A study of the impact of gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect transistors" @default.
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• W1837658997 doi "https://doi.org/10.1063/1.4931122" @default.
• W1837658997 hasPublicationYear "2015" @default.
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