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- W1837993869 abstract "To investigate the effect of 2% graphene cobalt (GC)-doped (Ca3Co4Ga0.001Ox) interfacial layer on the main electrical parameters, Au/n-Si (MS) Schottky barrier diodes (SBDs) were fabricated with and without this inter-facial layer. Using forward and reverse bias current-voltage (I-V) measurements, selected electrical parameters of these diodes were obtained and compared at room temperature. The energy density distribution profiles of the surface states (Nss) were obtained from the forward-bias I-V data by taking into account the voltage-dependent effective barrier height (?e) and ideality factor (n(V)). The value of Nss for the MPS-type diode is one order of magnitude lower than that of the MS diode. These results indicated that the 2% GC-doped (Ca3Co4Ga0.001Ox) interfacial layer prevents reaction and inter-diffusion between Au and n-Si as well as passivating the active dangling bonds at the semiconductor surface. In addition, the voltage-dependent profile of the resistance (Ri) was also obtained for the two diodes from the I-V data using Ohm's law. In both the MS- and MPS-type diodes, an apparent exponential increase in Nss was observed from the mid-gap toward the bottom of the Ec. The experimental results show that the existence of Nss, Rs, and the interfacial layer has a great effect on the electrical characteristics of these structures. The value of the depletion layer width was obtained from C-V measurements at 300kHz for the two diodes. The obtained results show that the GC-doped (Ca3Co4Ga0.001Ox) interfacial layer considerably enhances the diode performance. Display Omitted Au/n-Si (MS) and Au/2% graphene cobalt (GC)-doped (Ca3Co4Ga0.001Ox)/n-Si (MPS) type diodes were fabricated.The 2% GC-doped (Ca3Co4Ga0.001Ox) interfacial layer prevented reaction and inter-diffusion between Au and n-Si.The magnitude of Nss for the MPS-type diode was one order of magnitude lower than that of the MS-type diode.The interfacial 2% GC-doped Ca3Co4Ga0.001Ox layer enhanced the diode performance." @default.
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- W1837993869 date "2016-01-01" @default.
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- W1837993869 title "The comparative electrical characteristics of Au/n-Si (MS) diodes with and without a 2% graphene cobalt-doped Ca3Co4Ga0.001Ox interfacial layer at room temperature" @default.
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