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- W1839134003 abstract "An integrated 600 V power conversion system is described based on smart power technology which combines novel lateral high-voltage RESURF transistor structures and a merged bipolar/CMOS/DMOS process flow on thin-layer SOI substrates. A new high-voltage SOI LDMOS device structure is presented which results in a factor-of-two decrease in specific on-resistance and a factor-of-two improvement in source-follower saturated current, thus overcoming a key limitation of integrated thin-layer technology. This opens new application areas for thin-layer SOI, such as lighting electronics, power modules, motor control, and others, a significant development for the integration of power conversion systems." @default.
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- W1839134003 date "2003-01-20" @default.
- W1839134003 modified "2023-09-26" @default.
- W1839134003 title "600 V power conversion system-on-a-chip based on thin layer silicon-on-insulator" @default.
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- W1839134003 doi "https://doi.org/10.1109/ispsd.1999.764126" @default.
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