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- W1843348468 abstract "In situ phosphorus doped Si and Si/sub 1-x/Ge/sub x/ epitaxial layers have been grown at 600/spl deg/C in a very low pressure chemical vapor deposition system using SiH/sub 4/ and 1800 ppm PH/sub 3/ diluted in H/sub 2/. The epitaxial growth rates were found to decrease with phosphorus doping and input of the diluent H/sub 2/. The constant phosphorus concentration with depth for a steady flow of PH/sub 3/ was achieved. Dopant concentration is a function of gas phase dopant concentration. Chemical concentrations as high as 2.5/spl times/10/sup 20/ P/cm/sup 3/ were obtained in Si epitaxial layers. The doping level can be modulated between 1.2/spl times/10/sup 20/ and 1.5/spl times/10/sup 17/ P/cm/sup 3/. There is no evidence of a time-dependent accumulation of phosphorus on the growth surface or the reactor wall." @default.
- W1843348468 created "2016-06-24" @default.
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- W1843348468 date "2002-11-19" @default.
- W1843348468 modified "2023-09-27" @default.
- W1843348468 title "Low-temperature epitaxy of phosphorus doped Si and Si/sub 1-x/Ge/sub x/ films by RTP/VLP-CVD" @default.
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- W1843348468 doi "https://doi.org/10.1109/icsict.1995.500242" @default.
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