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- W1844331965 abstract "A focused ion beam (FIB) interface attached to a column of 200 keV transmission electron microscope (TEM) was developed for in-situ micropatterning to semiconductors. TEM specimens of Si, SiO/sub 2/ and GaAs were micromilled in the TEM during observation. Several figures were patterned with a 25 keV Ga/sup +/-FIB of 0.2 /spl mu/m beam diameter at room temperature. The effect of FIB irradiation on the structural changes was observed simultaneously by a TV-rate video camera and sequentially by regular films. FIB micropatterning to semiconductor specimens caused amorphization and Ga injection. The excess Ga in the specimens precipitated as metastable solid /spl gamma/-phase for Si and as liquid phase for GaAs." @default.
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- W1844331965 date "2002-11-28" @default.
- W1844331965 modified "2023-09-27" @default.
- W1844331965 title "In-situ observation of focused ion beam micromilled Si, SiO/sub 2/ and GaAs" @default.
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- W1844331965 doi "https://doi.org/10.1109/iit.1998.813858" @default.
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