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- W1844477603 abstract "This chapter considers the importance of surfaces in determining the properties of a thin film. Surface states and states inside the unavoidable surface oxide, and also those at the interface to the substrate, contribute to band bending, to charge transport and recombination, and to the kinetics of absorption and desorption of various species from the ambient. However, the surface of a-Si:H is not as readily oxidized as that of c-Si because its bonds are saturated with hydrogen. Transport can be dominated by charges in the two-dimensional potential wells at the boundaries of the film. A number of techniques can be used to study the surface: The Kelvin probe measures the surface potential with respect to a standard the surface photovoltage would measure band bending if one could flatten the bands by intense light—care must be taken because penetrating light would generate an opposing photovoltage at the other surface. Several other techniques for studying band bending and charged states at the surface are discussed—for example, photoconductivity under a gate electrode in a field-effect transistor configuration." @default.
- W1844477603 created "2016-06-24" @default.
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- W1844477603 date "1984-01-01" @default.
- W1844477603 modified "2023-10-18" @default.
- W1844477603 title "Chapter 9 Electronic Properties of Surfaces in a-Si: H" @default.
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- W1844477603 doi "https://doi.org/10.1016/s0080-8784(08)63073-2" @default.
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