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• W1844672148 abstract "We have demonstrated the extremely thin body (ETB) In 0.7 Ga 0.3 As-on-insulator (-OI) MOSFETs on Si substrates with Ni-InGaAs S/D structures. It has been found that low doping concentrations, In-rich channels (In 0.7 Ga 0.3 As), and buffer engineering provide high mobility of 2810 cm2/Vs even the total InGaAs thickness of 10 nm. This is the first demonstration of ETB III-V-OI MOSFETs combined with the Schottky-barrier free metal S/D technology. We have also achieved excellent I D -V G characteristics with I on /I off ratio of over 107 and low S.S. of 103 mV/dec in 2/1/3 nm-thick InGaAs MOSFETs with buffer layers." @default.
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• W1844672148 date "2011-06-14" @default.
• W1844672148 modified "2023-09-29" @default.
• W1844672148 title "High performance extremely-thin body III-V-on-insulator MOSFETs on a Si substrate with Ni-InGaAs metal S/D and MOS interface buffer engineering" @default.
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