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- W1854084910 abstract "Due to the use of (311)/sub B/ InP substrate we grew InAs SAQD with similar qualities to the InAs/GaAs system. In addition a method using a growth interruption under P/sub 2/ over pressure makes the control of the PL peak emission of the quantum dots structure easy to monitor. Thus this peak position is tuned to 1.55 /spl mu/m at room temperature. This method has also been used to grow vertically stacked QDs emitting at 1.55 /spl mu/m with high efficiency." @default.
- W1854084910 created "2016-06-24" @default.
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- W1854084910 date "2003-01-20" @default.
- W1854084910 modified "2023-09-27" @default.
- W1854084910 title "Achievement of vertically stacked InAs quantum dots on InP emitting at 1.55 μm" @default.
- W1854084910 cites W1971632456 @default.
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- W1854084910 doi "https://doi.org/10.1109/iciprm.1999.773703" @default.
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