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• W1856544097 abstract "The field gradient along the MOSFET channel is included in the modeling of the gate-drain capacitance (C/sub gd/) by an induced capacitance approach. The new approach has been successfully implemented in surface-potential based model HiSIM (Hiroshima-university STARC IGFET Model) and is capable of reproducing measured effects, which are particularly significant for pocket-implant technology, accurately." @default.
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• W1856544097 date "2003-06-25" @default.
• W1856544097 modified "2023-09-24" @default.
• W1856544097 title "Circuit-simulation model of gate-drain-capacitance changes in small-size MOSFETs due to high channel-field gradients" @default.
• W1856544097 cites W1984735239 @default.
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• W1856544097 doi "https://doi.org/10.1109/sispad.2002.1034514" @default.
• W1856544097 hasPublicationYear "2003" @default.
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