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• W185707878 abstract "This thesis treats the design and characterization of amplifiers operating up tosubmillimeter-wave frequencies and packaging of such circuits into waveguidemodules. The circuits use an advanced indium phosphide (InP) double heterojunctionbipolar transistor (DHBT) process with a multilayer back-end. Several amplifiers inthe frequency range from 80 to 300 GHz with state-of-the-art performance arepresented. The amplifiers utilize different transistor configurations: common-emitter,common-base, and cascode. One of the amplifiers, a five-stage common-emittercircuit, demonstrates 24 dB gain at 255 GHz with a minimum noise figure of 10.4 dBat 265 GHz. This is the lowest reported noise figure for amplifiers in bipolartechnology operating at such high frequencies. Circuits like these can findapplications in a variety of systems such as wireless high data-rate communicationlinks and high-resolution imaging systems.Furthermore, amplifiers with the highest reported bandwidths for transistorbasedamplifiers, regardless of transistor technology, are presented in this thesis.These amplifiers use distributed topologies to achieve such wideband characteristics.The widest bandwidth is reached with a 2-cascaded distributed amplifier that has anaverage gain of 16 dB from 2 to 237 GHz, i.e., a bandwidth of 235 GHz.A potential problem with integrated circuits with a large front-side metallizationis the risk of resonating parasitic modes within the circuit substrate. The influence ofsuch resonances is studied through simulations and measurements of passive andactive circuits. It is shown that a resistive Si carrier underneath the circuit is aneffective method to eliminate the effects of parasitic substrate modes.The high operating frequencies of these circuits make the development of afunctional packaging method challenging. In this thesis, two waveguide InP DHBTamplifier modules operating in the frequency bands 150‒260 GHz and 210‒300 GHzusing a novel waveguide-to-circuit transition realized in membrane technology aredemonstrated. It is the first published results on InP DHBT amplifier modulesoperating at these high frequencies. Furthermore, membrane technology has not beenused in packaging of transistor-based integrated circuits before. One of the amplifiermodules is measured at a temperature of 100 K. The noise temperature of the moduleis reduced from 3500 K at room temperature to 1800 K when cooled. This is the firstreported characterization of an InP DHBT circuit at cryogenic temperature." @default.
• W185707878 created "2016-06-24" @default.
• W185707878 creator A5055879462 @default.
• W185707878 date "2015-01-01" @default.
• W185707878 modified "2023-09-26" @default.
• W185707878 title "InP DHBT Amplifiers and Circuit Packaging up to Submillimeter-Wave Frequencies" @default.
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