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• W1857215014 abstract "Si – Ba 0.5 Sr 0.5 Ti O 3 composite thin films were deposited by pulsed laser deposition technique on (100) Nb:SrTiO3 substrates. The crystal structure and surface morphology of the thin films have been characterized by x-ray diffraction and atomic force microscopy, respectively. Experimental results suggested that the Si composition has played a positive role in improving the dielectric properties of the thin films. With the increased Si concentration, the dielectric loss was significantly reduced, accompanied with a tolerable reduction of tunability. In particular, the 14% Si composite film exhibited a dielectric loss of 0.005, which is much lower than that of the undoped Ba0.5Sr0.5TiO3 (BST) film. Moreover, a proper concentration of Si in the film improved the figure of merit from 9 of the undoped BST to 23 of 1.4% Si composite films." @default.
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• W1857215014 date "2005-08-01" @default.
• W1857215014 modified "2023-10-18" @default.
• W1857215014 title "Dielectric properties of Si–Ba0.5Sr0.5TiO3 composite thin films elaborated by pulsed laser deposition" @default.
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• W1857215014 doi "https://doi.org/10.1063/1.1999852" @default.
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