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- W186067447 abstract "Computer logic chips of the last generation are based on silicon, modified to achieve maximum charge mobility to enable fast switching speeds at low power. III-V semiconductors have charge mobilities that are much higher than that of silicon making them suitable candidates for boosting the performance of new electronic devices. However, III-V semiconductors oxidize rapidly in air after oxide etching and the poor quality of the resulting oxide limits device performance. Our goal is to design a liquid-phase process flow to etch the oxide and passivate the surface of III-V semiconductors and to understand the mechanism of layer formation." @default.
- W186067447 created "2016-06-24" @default.
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- W186067447 date "2013-11-08" @default.
- W186067447 modified "2023-09-27" @default.
- W186067447 title "Passivation of III-V Semiconductor Surfaces" @default.
- W186067447 hasPublicationYear "2013" @default.
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