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• W1865930892 abstract "We report on growth, fabrication and characterization of metal–semiconductor–metal (MSM) photodetectors based on periodic heterostructures with ZnCdS quantum wells separated by ZnMgS and ZnS barrier layers. Heterostructures were grown on semi-insulating GaP substrates by MOVPE. MSM-diodes with width of Ni–Au interdigitated Schottky barrier contacts and gap between them of 3 μm and total detector area of 100 × 100 μm2 have been fabricated. Detecting properties of MSM-heterophotodiodes have been investigated. We observe electrically tunable spectral response of these detectors. At low bias detectors provide narrowband response (FWHM = 18 nm at the wavelength 350 nm) determined by a composition of ZnCdS quantum well. Increasing bias up to 70 V shifts maximum detector sensitivity at the wavelength 450 nm while narrowband response at 350 nm remains. Thus, a two-color detection of light emission is provided." @default.
• W1865930892 created "2016-06-24" @default.
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• W1865930892 date "2015-12-01" @default.
• W1865930892 modified "2023-10-18" @default.
• W1865930892 title "Electrically tunable spectral responsivity in metal–semiconductor–metal photodetectors based on low-dimensional ZnCdS/ZnMgS/GaP, ZnCdS/ZnS/GaP heterostructures" @default.
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• W1865930892 doi "https://doi.org/10.1016/j.sse.2015.09.008" @default.
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