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• W1871058825 abstract "Single-crystal ZnO films were grown on [012]LiTaO/sub 3/ substrates by electron cyclotron resonance-assisted molecular beam epitaxy (ECR-assisted MBE). The film orientation differed with the ratio of oxygen to zinc. Under oxygen-rich conditions, [110]ZnO films with the c-axis parallel to the substrate surface were epitaxially grown. To identify the polarity of ZnO films with the c-axis parallel to the surface, a method using sideways chemical etching was proposed. The polarity of ZnO films was different when the films were grown on the + plane or the - plane of [012]LiTaO/sub 3/ substrates. For comparison, the polarity of ZnO films grown on r-plane sapphire was determined. As a result, it was found that the polarity of substrates greatly affected that of ZnO films. The ZnO/LiTaO/sub 3/ substrates offer a high electromechanical coupling factor of the shear horizontal-type leaky surface acoustic wave (SH-type leaky SAW) propagating along the X-axis due to an additional contribution of the piezoelectric shear effect of ZnO." @default.
• W1871058825 created "2016-06-24" @default.
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• W1871058825 date "2002-11-11" @default.
• W1871058825 modified "2023-09-26" @default.
• W1871058825 title "Growth of ZnO films on [012]LiTaO/sub 3/ by ECR-MBE and determination of their polarity" @default.
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• W1871058825 doi "https://doi.org/10.1109/isaf.2000.941598" @default.
• W1871058825 hasPublicationYear "2002" @default.
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