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• W1876975244 abstract "Plasma charging causes gate oxide degradation and breakdown. In this paper a mechanisin is presented for P+ poly gates where the plasma charging during processing causes a stress induced Ieakage behavior (SILC) under accelerated life testing. The mechanism appears under positive gate bias for P+ poly-gated devices, and does not show under any bias conditions for N + poly-gated devices. The degradation exhibited a strong dependence on oxide thickness and temperature. The mechanism is explained in terms of enhanced degradation for the P+ poly-gated devices during processing and subsequent trap assisted-tunneling under accelerated life test." @default.
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• W1876975244 date "2005-08-24" @default.
• W1876975244 modified "2023-09-25" @default.
• W1876975244 title "Mechanism of Stress-Induced Leakage Due to Plasma Charging and Effect of Oxide Thickness" @default.
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• W1876975244 doi "https://doi.org/10.1109/ppid.1996.715224" @default.
• W1876975244 hasPublicationYear "2005" @default.
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