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• W1877676346 abstract "We investigated the design and growth of compositionally graded InGaN multiplequantum-well (MQW)-based light-emitting diodes (LEDs) without an electron-blocking layer. Numerical investigation showed uniform carrier distribution in the active region and higher radiative recombination rate for the optimized graded-MQW design, i.e., In <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0→x</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1→(1-x)</sub> N/In <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>(1-x)</sub> N/In <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x→0</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>(1-x)→1</sub> N, as compared with the conventional stepped-MQW-LED. The composition-grading schemes, such as linear, parabolic, and Fermi-function profiles, were numerically investigated for comparison. The stepped- and graded-MQW-LEDs were then grown using plasma-assisted molecular beam epitaxy through surface-stoichiometry optimization based on reflection high-energy electron diffraction in situ observations. Stepped- and graded-MQW-LED showed efficiency roll over at 160 and 275 A/cm2, respectively. The extended threshold current density rollover (droop) in graded-MQW-LED is due to the improvement in carrier uniformity and radiative recombination rate, which is consistent with the numerical simulation." @default.
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• W1877676346 date "2015-06-01" @default.
• W1877676346 modified "2023-10-12" @default.
• W1877676346 title "Achieving Uniform Carrier Distribution in MBE-Grown Compositionally Graded InGaN Multiple-Quantum-Well LEDs" @default.
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• W1877676346 doi "https://doi.org/10.1109/jphot.2015.2430017" @default.
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