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- W1878252571 abstract "In this letter, we propose a model based on noise analysis for the filamentary switching mechanism in resistance random access memory having ZrOx/HfOx bilayer stacks. From the noise analysis results, we concluded that the current flowing during high-resistance state can be described as a trap-assisted current that flows through traps. It has been hypothesized that these traps are the cause of the instability of device parameters. To validate this, the noise analysis results of large-area devices were compared with those of small-area devices. As a consequence, we improved the uniformity of device parameters." @default.
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- W1878252571 date "2011-07-01" @default.
- W1878252571 modified "2023-09-30" @default.
- W1878252571 title "Noise-Analysis-Based Model of Filamentary Switching ReRAM With $hbox{ZrO}_{x}/hbox{HfO}_{x}$ Stacks" @default.
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- W1878252571 doi "https://doi.org/10.1109/led.2011.2148689" @default.
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