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- W1878293549 abstract "This paper reports a new damage-free flattening technology of large diameter Si wafer employing numerically controlled local SF/sub 6//H/sub 2/ downstream plasma based on CDE (chemical dry etching) and diseases the dirty texture formation mechanism of the etched Si wafer surface." @default.
- W1878293549 created "2016-06-24" @default.
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- W1878293549 date "2002-11-07" @default.
- W1878293549 modified "2023-10-02" @default.
- W1878293549 title "Damage-free flattening technology of large diameter Si wafer employing numerically controlled local SF/sub 6//H/sub 2/ downstream plasma" @default.
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- W1878293549 doi "https://doi.org/10.1109/imnc.2000.872759" @default.
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