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• W1882003454 abstract "Pronounced electrocatalytic oxidation enhancement at the surface of InGaN layers and nanostructures directly grown on Si by plasma-assisted molecular beam epitaxy is demonstrated. The oxidation enhancement, probed with the ferro/ferricyanide redox couple increases with In content and proximity of nanostructure surfaces and sidewalls to the c-plane. This is attributed to the corresponding increase of the density of intrinsic positively charged surface donors promoting electron transfer. Strongest enhancement is for c-plane InGaN layers functionalized with InN quantum dots (QDs). These results explain the excellent performance of our InN/InGaN QD biosensors and water splitting electrodes for further boosting efficiency." @default.
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• W1882003454 date "2015-11-01" @default.
• W1882003454 modified "2023-10-02" @default.
• W1882003454 title "Electrocatalytic oxidation enhancement at the surface of InGaN films and nanostructures grown directly on Si(111)" @default.
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• W1882003454 doi "https://doi.org/10.1016/j.elecom.2015.09.003" @default.
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