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- W1883744950 abstract "P-type Schottky barrier based tunnel FET with gate-around-drain structure formed by junctionless FET process." @default.
- W1883744950 created "2016-06-24" @default.
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- W1883744950 date "2015-01-01" @default.
- W1883744950 modified "2023-09-28" @default.
- W1883744950 title "Non-silicide Schottky barrier p-type tunnel FET with a gate-around-drain structure formed by a junctionless FET process" @default.
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- W1883744950 doi "https://doi.org/10.1039/c5ra06280b" @default.
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