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• W1883997612 abstract "Pregettering by phosphorus diffusion at temperatures between 800 and 1050 degrees C within the surface is shown to improve the electron diffusion length L/sub n/ in p-type polycrystalline silicon wafers. Provided the temperature is below 950 degrees C it is found that these treatments reduce the dislocation etch pit and the bulk recombination center densities in the material. Consequently, L/sub n/ increases. It is also found that the effect of passivation by hydrogen is drastically enhanced in treated samples. The two treatments are compatible with solar cell preparation techniques and could be applied to improve or to homogenize their efficiency. >" @default.
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• W1883997612 date "1988-01-01" @default.
• W1883997612 modified "2023-09-25" @default.
• W1883997612 title "Influence of phosphorus external gettering on recombination activity and passivation of defects in polycrystalline silicon" @default.
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• W1883997612 doi "https://doi.org/10.1109/pvsc.1988.105975" @default.
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