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• W1886646849 abstract "The structural and electronic properties of Ga-As suboxide representative of the transition region at the GaAs/oxide interface are studied through density functional calculations. Two amorphous models generated by quenches from the melt are taken under consideration. The absence of As–O bonds indicates that the structure is a mixture of GaAs and Ga-oxide, in accordance with photoemission experiments. The band edges of the models are found to be closely aligned to those of GaAs. The simulation of charging and discharging processes leads to the identification of an As-related defect with an energy level at ∼0.7 eV above the GaAs valence band maximum, in good agreement with the experimental density of interface states." @default.
• W1886646849 created "2016-06-24" @default.
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• W1886646849 date "2015-07-20" @default.
• W1886646849 modified "2023-10-02" @default.
• W1886646849 title "Interfacial Ga-As suboxide: Structural and electronic properties" @default.
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• W1886646849 doi "https://doi.org/10.1063/1.4927311" @default.
• W1886646849 hasPublicationYear "2015" @default.
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