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• W1888481695 abstract "Gallium nitride (GaN) was deposited on sapphire at 275 °C, using plasma-enhanced atomic layer deposition. The films are single-crystal for the first ∼5 nm, before they transition to a polycrystalline structure. These structural shifts are reflected in the variations of the refractive index." @default.
• W1888481695 created "2016-06-24" @default.
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• W1888481695 date "2015-01-01" @default.
• W1888481695 modified "2023-09-26" @default.
• W1888481695 title "A route to low temperature growth of single crystal GaN on sapphire" @default.
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• W1888481695 doi "https://doi.org/10.1039/c5tc01556a" @default.
• W1888481695 hasPublicationYear "2015" @default.
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