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- W1899112478 abstract "To achieve effective k value less than 3.0, we investigated spin-on dielectric stack damascene integration scheme with electron beam (EM) cure. By using porous-MSQ (k=2.3) as ILD and dense-MSQ (k=2.9) as hard mask (HM), effective k value could be lowered, and by EB curing the full dielectric stack only once, mechanical strength for both ILD and HM were improved and a reduced thermal budget was obtained. In addition, a low damage resist strip process for the low-k materials was evaluated. These elements of BEOL technology have applicability to 45nm technology node and beyond." @default.
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- W1899112478 date "2004-10-26" @default.
- W1899112478 modified "2023-09-27" @default.
- W1899112478 title "Spin-on dielectric stack low-k integration with EB curing technology for 45nm-node and beyond" @default.
- W1899112478 doi "https://doi.org/10.1109/iitc.2004.1345721" @default.
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