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• W1900405992 startingPage "15127" @default.
• W1900405992 abstract "The temperature dependence of electrical transport properties was investigated for multilayered MoS2 field effect transistor devices with thicknesses of 3-22 nm. Some devices showed typical n-type semiconducting behavior, while others exhibited metal-insulator crossover (MIC) from metallic to insulating conduction at finite temperatures. The latter effect occurred near zero gate voltage or at high positive gate voltages. Analysis of Raman spectroscopy revealed the key difference that devices with MIC have a metallic 1T phase as well as a semiconducting 2H phase, whereas devices without the MIC did not have a metallic 1T phase. These results suggest that the metallic 1T phase may contribute to inducing the MIC." @default.
• W1900405992 created "2016-06-24" @default.
• W1900405992 creator A5001672847 @default.
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• W1900405992 date "2015-01-01" @default.
• W1900405992 modified "2023-10-01" @default.
• W1900405992 title "Metal–insulator crossover in multilayered MoS₂" @default.
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• W1900405992 doi "https://doi.org/10.1039/c5nr05223h" @default.
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