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• W1900438276 abstract "In this paper, we report the fabrication and characterization of phosphorus-implanted 4H-SiC n/sup +//p junction rectifiers. Sheet resistance measurements of the implanted layers indicated values as low as 160 /spl Omega///spl square/. The forward characteristics of these diodes obey a generalized Shockley-Noyce-Sah (SNS) multiple-trap recombination model with 4 shallow levels and 1 deep level. Close-to-ideal avalanche breakdown voltage with a positive temperature coefficient is observed. The high-level injection lifetime has been extracted to characterize the switching behaviour of these diodes." @default.
• W1900438276 created "2016-06-24" @default.
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• W1900438276 date "2002-11-27" @default.
• W1900438276 modified "2023-09-26" @default.
• W1900438276 title "Phosphorus-implanted high-voltage n/sup +/p 4H-SiC junction rectifiers" @default.
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• W1900438276 doi "https://doi.org/10.1109/ispsd.1998.702724" @default.
• W1900438276 hasPublicationYear "2002" @default.
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