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• W1907430914 abstract "Thin films of the wide bandgap quaternary semiconductor InxAlyGa(1−x−y)N with low In (x = 0.01–0.05) and high Al composition (y = 0.40–0.49) were synthesized on GaN templates by plasma-assisted molecular beam epitaxy. High-resolution X-ray diffraction was used to correlate the strain accommodation of the films to composition. Room temperature ultraviolet B (280 nm–320 nm) photoluminescence intensity increased with increasing In composition, while the Stokes shift remained relatively constant. The data suggest a competition between radiative and non-radiative recombination occurs for carriers, respectively, localized at centers produced by In incorporation and at dislocations produced by strain relaxation." @default.
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• W1907430914 date "2015-09-28" @default.
• W1907430914 modified "2023-10-14" @default.
• W1907430914 title "Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy" @default.
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• W1907430914 doi "https://doi.org/10.1063/1.4931942" @default.
• W1907430914 hasPublicationYear "2015" @default.
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