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- W1908851157 abstract "Single crystalline n‐type GaAs was made porous by anodic etching in a hydrofluoric acid based solution. The morphology, chemical composition and photoluminescence (PL) of the porous layer were investigated. It has been shown that the porous layer consists of As2O3, and Ga2O3 submicron transparent crystals grown on the porous GaAs (π‐GaAs) skeleton under certain chemical conditions during the electrochemical etching of GaAs. Energy dispersive X‐ray indicated stoichiometric composition of these crystals. These crystalline deposits have been investigated by X‐ray diffraction. Photoluminescence measurement under excitation at 325 nm showed that these crystals had three emission peaks at 363, 410, and 428 nm besides the π‐GaAs peaks." @default.
- W1908851157 created "2016-06-24" @default.
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- W1908851157 date "2008-01-01" @default.
- W1908851157 modified "2023-09-25" @default.
- W1908851157 title "Synthesis of GaAs Oxides Grown During Electrochemical Formation of Porous GaAs in HF Based Solution" @default.
- W1908851157 doi "https://doi.org/10.1063/1.2940683" @default.
- W1908851157 hasPublicationYear "2008" @default.
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