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• W1909141330 abstract "The ESD robustness of copper (Cu) interconnects in low-k interlevel dielectrics (ILD) is shown for the first time. Critical-current density to failure J/sub crit/, high-current resistance change /spl Delta/R/R/sub o/, and thermal impedance /spl theta//sub TH/ are determined for Cu-based interconnects with silicon dioxide (SiO/sub 2/) and low-k interlevel dielectrics. Experimental results indicate that ESD robustness of Cu-based interconnects in low-k ILD (k=2.9) is affected by low-k material (compared to Cu wires in SiO/sub 2/ ILD), yet have superior ESD robustness compared to Al-based interconnects." @default.
• W1909141330 created "2016-06-24" @default.
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• W1909141330 date "2003-01-20" @default.
• W1909141330 modified "2023-09-27" @default.
• W1909141330 title "High-current characterization of dual-damascene copper interconnects in SiO/sub 2/- and low-k interlevel dielectrics for advanced CMOS semiconductor technologies" @default.
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• W1909141330 doi "https://doi.org/10.1109/relphy.1999.761606" @default.
• W1909141330 hasPublicationYear "2003" @default.
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