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• W1910369101 endingPage "3476" @default.
• W1910369101 startingPage "3470" @default.
• W1910369101 abstract "Using a novel gate-last process scheme that affords precise channel thickness control, we have fabricated self-aligned InGaAs quantum-well (QW) MOSFETs. Devices with a channel thickness between 3 and 12 nm, and a gate length between 40 nm and 5 μm are fabricated on a heterostructure that includes a composite InGaAs/InAs QW and an InP barrier. It is observed that channel thickness has a strong impact on the device characteristics. In general, a thick channel is beneficial to ON-state figures of merit, including transconductance and effective carrier mobility. However, a thin channel is beneficial to OFF-state metrics, such as subthreshold swing and drain-induced barrier lowering (DIBL). The InAs composition and effective mass that electrons experience in the channel emerges as a factor that significantly affects channel mobility and presumably the transport characteristics of these devices. The subthreshold swing and DIBL are found to follow a classic scaling behavior. This suggests that the InGaAs QW MOSFETs are at the limit of scaling around L <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>g</sub> = 50 nm." @default.
• W1910369101 created "2016-06-24" @default.
• W1910369101 creator A5056314310 @default.
• W1910369101 creator A5073869547 @default.
• W1910369101 creator A5084053130 @default.
• W1910369101 date "2015-11-01" @default.
• W1910369101 modified "2023-10-14" @default.
• W1910369101 title "Impact of Intrinsic Channel Scaling on InGaAs Quantum-Well MOSFETs" @default.
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• W1910369101 doi "https://doi.org/10.1109/ted.2015.2444835" @default.
• W1910369101 hasPublicationYear "2015" @default.
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