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• W1915579131 abstract "While presence of Na is essential for the performance of high-efficiency Cu(In,Ga)Se2 thin film solar cells, the reasons why addition of Na by post-deposition treatment is superior to pre-deposition Na supply—particularly at low growth temperatures—are not yet fully understood. Here, we show by X-ray diffraction and electron microscopy that Na impedes annihilation of stacking faults during the Cu-poor/Cu-rich transition of low temperature 3-stage co-evaporation and prevents Cu homogeneity on a microscopic level. Lower charge carrier mobilities are found by optical pump terahertz probe spectroscopy for samples with remaining high stacking fault density, indicating a detrimental effect on electronic properties if Na is present during growth." @default.
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• W1915579131 date "2015-10-12" @default.
• W1915579131 modified "2023-10-01" @default.
• W1915579131 title "Effect of Na presence during CuInSe2 growth on stacking fault annihilation and electronic properties" @default.
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• W1915579131 doi "https://doi.org/10.1063/1.4933305" @default.
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