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- W1917289109 abstract "Silicon doping in undoped GaN has been performed by irradiating amorphous silicon film deposited by ion beam sputtering on GaN using 248 nm KrF excimer laser. Sheet resistances and depth profiles of the Si-doped GaN as functions of a number of laser pulses and laser fluence have been measured in order to clarify the relation between properties of doped GaN and irradiation conditions. The minimum sheet resistance of about 60 Ω / □ was obtained. SIMS analysis showed that Si is successfully diffused into GaN. The depths of doped regions ranging from 38 nm to 110 nm were obtained and can be readily controlled by irradiation conditions. Temperature-dependent Hall measurements for doped regions were investigated as a function of laser fluence. wavelength KrF excimer laser to melt amorphous silicon (a-Si) layer deposited on GaN is described. The variation of sheet resistance of doped GaN and depth profiles of silicon as functions of the laser fluences and the number of laser pulses will be discussed. Hall measurements suggested that the decrease of sheet resistance is due to the increase of charge carrier density. 2. Experiment" @default.
- W1917289109 created "2016-06-24" @default.
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- W1917289109 date "2015-01-01" @default.
- W1917289109 modified "2023-09-27" @default.
- W1917289109 title "KrF Excimer Laser Doping of Si into GaN" @default.
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