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• W1917648460 abstract "A deep-ultraviolet photodetector based on a Ni0.52Mg0.48O film was fabricated using a simple radio-frequency sputtering technique and a Ni–Mg composite target. The Ni1−xMgxO band gap can be tuned by adjusting the Mg content, which in turn can be controlled by varying the number of Mg chips on the Ni target. The lattice constant of Ni1−xMgxO linearly depends on the Mg content, whereas the plot of the band gap versus Mg content exhibits bowing. The fabricated photodetector based on the Ni0.52Mg0.48O film operates as a deep-ultraviolet photodetector and shows peak responsivity at a wavelength of 276 nm." @default.
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• W1917648460 date "2015-09-16" @default.
• W1917648460 modified "2023-09-24" @default.
• W1917648460 title "Band gap tuning of Ni₁₋<i>_x</i>Mg<i>_x</i>O films by radio-frequency sputter deposition for deep-ultraviolet photodetectors" @default.
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• W1917648460 doi "https://doi.org/10.7567/apex.8.105801" @default.
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