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• W1917752268 endingPage "7080" @default.
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• W1917752268 abstract "We investigated the stress stability of the W–Ti absorber during the patterning process. The three kinds of mask stacks used were stable during the mask fabrication steps and after being kept in air for six months. We also investigated the IP shift due to etching of the quartermicron-rule device patterns. The line pattern mask indicated larger displacement than the hole mask, however, no remarkable anisotropic distortion was observed because the sidewall area of those masks was not as much as in the case of 100 nm device masks. Anisotropic distortion along the line was clearly observed in the case of absorber etching in the 100 nm region. The maximum displacement observed in the mask geometry was 21 nm, however, it is expected to decrease in the case of a narrow perimeter for a low contrast X-ray mask." @default.
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• W1917752268 date "1999-12-01" @default.
• W1917752268 modified "2023-09-23" @default.
• W1917752268 title "Stress Stability of W–Ti X-Ray Absorber in Patterning Process" @default.
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• W1917752268 doi "https://doi.org/10.1143/jjap.38.7080" @default.
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