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- W1918510013 abstract "A solution growth technique has been developed capable of depositing large grain (up to 20-30 /spl mu/m) Si films at temperatures no higher than 650/spl deg/C for application as the base in a-Si:H/poly-Si heterojunction solar cells. XRD analysis of the deposited films show a strong (111) preferred orientation, depending on the use of a wetting agent during growth. A well-defined grain structure is seen by SEM examination. Films deposited using an In-Si solution are p-type; those from Sn-Si solutions are n-type. Carrier concentrations range from the low 10/sup 16/ cm to the mid 10/sup 17/ cm range. Conductivities as high as 0.2 (/spl Omega/ cm)/sup -1/ were measured. Hall effect measurements showed hole mobilities as high as /spl sim/30 cm/sup 2/ V/sup -1/ s/sup -1/. Photoresponse is reduced for films deposited with a wetting agent." @default.
- W1918510013 created "2016-06-24" @default.
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- W1918510013 date "2002-12-17" @default.
- W1918510013 modified "2023-09-27" @default.
- W1918510013 title "Thin film polycrystalline Si by a novel solution growth technique [for solar cells]" @default.
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- W1918510013 doi "https://doi.org/10.1109/wcpec.1994.520204" @default.
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